Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)65 V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1617 pF @ 30 V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-QFN (3x3)
Package / Case8-PowerVDFN
Grade-
Qualification-
In Stock:
2982
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.313 | |
10 | 0.306 | |
100 | 0.3 | |
1000 | 0.29 | |
10000 | 0.28 |