Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.55mOhm @ 120A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5832 pF @ 20 V
FET Feature-
Power Dissipation (Max)225W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade-
Qualification-
In Stock:
2739
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.36 | |
10 | 2.313 | |
100 | 2.24 | |
1000 | 2.17 | |
10000 | 2.08 |