DI200N10D2
Part NoDI200N10D2
ManufacturerDiotec Semiconductor
DescriptionIC
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 120A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs262 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16800 pF @ 50 V
FET Feature-
Power Dissipation (Max)340W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
In Stock:
2064
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.31 | |
| 10 | 2.264 | |
| 100 | 2.19 | |
| 1000 | 2.13 | |
| 10000 | 2.03 |
Associated Product
