DIJ2A3N65
Part NoDIJ2A3N65
ManufacturerDiotec Semiconductor
DescriptionIC
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 25 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220F
Package / CaseTO-220-3 Full Pack
Grade-
Qualification-
In Stock:
2546
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.284 | |
| 10 | 0.278 | |
| 100 | 0.27 | |
| 1000 | 0.26 | |
| 10000 | 0.25 |
Associated Product
