DIJ4A5N65
RoHS

DIJ4A5N65

Part NoDIJ4A5N65
ManufacturerDiotec Semiconductor
DescriptionIC
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ECAD Module DIJ4A5N65
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Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 25 V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220F
Package / CaseTO-220-3 Full Pack
Grade-
Qualification-
In Stock: 2605
Pricing
QTY UNIT PRICE EXT PRICE
1 0.396
10 0.388
100 0.38
1000 0.36
10000 0.35
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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