DIW012N65
Part NoDIW012N65
ManufacturerDiotec Semiconductor
DescriptionIC
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1479 pF @ 34 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
Grade-
Qualification-
In Stock:
2315
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.36 | |
| 10 | 2.313 | |
| 100 | 2.24 | |
| 1000 | 2.17 | |
| 10000 | 2.08 |
Associated Product
