Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5274 pF @ 350 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
In Stock:
2160
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 5.086 | |
10 | 4.984 | |
100 | 4.83 | |
1000 | 4.68 | |
10000 | 4.48 |