DIW120SIC023-AQ
RoHS

DIW120SIC023-AQ

Part NoDIW120SIC023-AQ
ManufacturerDiotec Semiconductor
DescriptionMOSFET TO-247-3L N 130A 1200V
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ECAD Module DIW120SIC023-AQ
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C125A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)23mOhm @ 75A, 18V
RdsOn(Max)@Id2.9V @ 250µA
Vgs45 nC @ 18 V
Vgs(th)(Max)@Id-
Vgs(Max)6150 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature600W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock: 10107
Pricing
QTY UNIT PRICE EXT PRICE
1 77.3612
10 75.814
100 73.4931
1000 71.1723
10000 68.0779
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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