Specification
PackageBulk
Series-
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2.6A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Grade-
Qualification-
In Stock:
2496
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.046 | |
10 | 0.045 | |
100 | 0.04 | |
1000 | 0.04 | |
10000 | 0.04 |