Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs300mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 20 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Grade-
Qualification-
In Stock:
2492
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.087 | |
10 | 0.085 | |
100 | 0.08 | |
1000 | 0.08 | |
10000 | 0.08 |