EPC7007BC
Part NoEPC7007BC
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT200V18A COTS 4FSMD-B
Datasheet
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Specification
PackageBulk
Seriese-GaN®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)28mOhm @ 18A, 5V
RdsOn(Max)@Id2.5V @ 3mA
Vgs5.4 nC @ 5 V
Vgs(th)(Max)@Id525 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeSurface Mount
SupplierDevicePackage4-SMD
Package/Case4-SMD, No Lead
GateCharge(Qg)(Max)@Vgs+6V, -4V
Grade
Qualification
In Stock:
21269
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 278.784 | |
10 | 273.2083 | |
100 | 264.8448 | |
1000 | 256.4813 | |
10000 | 245.3299 |