EPC7007BSH
Part NoEPC7007BSH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 200V 18A 4UB
Datasheet
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ECAD Module
Specification
PackageBulk
SerieseGaN®, FSMD-B
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-SMD
Package / Case4-SMD, No Lead
Grade-
Qualification-
In Stock:
50
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 432.76 | |
| 10 | 424.105 | |
| 100 | 411.12 | |
| 1000 | 398.14 | |
| 10000 | 380.83 |
Associated Product
