FBG04N08ASH
Part NoFBG04N08ASH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 40V 8A 4FSMD-A
Datasheet
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ECAD Module
Specification
PackageBulk
Seriese-GaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)24mOhm @ 8A, 5V
RdsOn(Max)@Id2.5V @ 2mA
Vgs2.8 nC @ 5 V
Vgs(th)(Max)@Id+6V, -4V
Vgs(Max)312 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType4-SMD
SupplierDevicePackage4-SMD, No Lead
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19830
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 337.765 | |
| 10 | 331.0097 | |
| 100 | 320.8767 | |
| 1000 | 310.7438 | |
| 10000 | 297.2332 |
Associated Product
