FBG10N05ASH
Part NoFBG10N05ASH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 100V 5A 4FSMD-A
Datasheet
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ECAD Module
Specification
PackageBulk
SerieseGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)45mOhm @ 5A, 5V
RdsOn(Max)@Id2.5V @ 1.2mA
Vgs2.2 nC @ 5 V
Vgs(th)(Max)@Id+6V, -4V
Vgs(Max)233 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType4-SMD
SupplierDevicePackage4-SMD, No Lead
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3273
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 404.5325 | |
| 10 | 396.4419 | |
| 100 | 384.3059 | |
| 1000 | 372.1699 | |
| 10000 | 355.9886 |
Associated Product
