FBG20N18BSH
Part NoFBG20N18BSH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 200V 18A 4FSMD-B
Datasheet
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ECAD Module
Specification
PackageBulk
Seriese-GaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)28mOhm @ 18A, 5V
RdsOn(Max)@Id2.5V @ 3mA
Vgs7 nC @ 5 V
Vgs(th)(Max)@Id900 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeSurface Mount
SupplierDevicePackage4-SMD
Package/Case4-SMD, No Lead
GateCharge(Qg)(Max)@Vgs+6V, -4V
Grade
Qualification
In Stock:
6307
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 345.62 | |
| 10 | 338.7076 | |
| 100 | 328.339 | |
| 1000 | 317.9704 | |
| 10000 | 304.1456 |
Associated Product
