B82422A1332K100
Part NoB82422A1332K100
ManufacturerEPC
Description
Datasheet
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ECAD Module
Specification
Case/Package1210
Case Code (Imperial)1210
Case Code (Metric)3225
CompositionWirewound
Contact PlatingTin
Core MaterialFerrite
Current Rating200 mA
DC Current200 mA
DC Resistance (DCR)1.2 Ω
Depth2.8 mm
Height2 mm
Height - Seated (Max)2.1082 mm
Inductance3.3 µH
Inductance Tolerance10 %
Lead FreeLead Free
Lifecycle StatusProduction (Last Updated: 1 year ago)
Max DC Current200 mA
Max Length3.5 mm
Max Operating Temperature125 °C
Max Width2.8 mm
Military StandardNot
Min Operating Temperature-55 °C
MountSurface Mount
Number of Pins2
Q Factor27
Radiation HardeningNo
RatingsAEC-Q200
REACH SVHCNo SVHC
Resistance1.2 Ω
RoHSCompliant
Schedule B8504500000, 8504500000|8504500000|8504500000|8504500000|8504500000
Self Resonant Frequency110 MHz
Series Resistance1.2 Ω
ShieldingUnshielded
TerminationSMD/SMT
Test Frequency1 MHz
Tolerance10 %
Weight50.008559 mg
In Stock:
10009
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.552 | |
| 10 | 0.541 | |
| 100 | 0.5244 | |
| 1000 | 0.5078 | |
| 10000 | 0.4858 |
Associated Product
IRF520V
International Rectifier
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
International Rectifier
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
