EPC2025ENGR
Part NoEPC2025ENGR
ManufacturerEPC
DescriptionTRANS GAN 300V 4A BUMPED DIE
Datasheet
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Specification
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
Supplier Device PackageDie Outline (12-Solder Bar)
SerieseGaN®
Rds On (Max) @ Id, Vgs150 mOhm @ 3A, 5V
Power Dissipation (Max)-
PackagingTray
Package / CaseDie
Other Names917-EPC2025ENGR
EPC2025ENGRC
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds194pF @ 240V
Gate Charge (Qg) (Max) @ Vgs1.85nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V
Drain to Source Voltage (Vdss)300V
Detailed DescriptionN-Channel 300V 4A (Ta) Surface Mount Die Outline (12-Solder Bar)
Current - Continuous Drain (Id) @ 25°C4A (Ta)
In Stock:
6198
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Associated Product
XC2C32A-6CPG56C
Xilinx
CPLD CoolRunner -II Family 750 Gates 32 Macro Cells 200MHz 0.18um (CMOS) Technology 1.8V 56-Pin CSBGA
Xilinx
CPLD CoolRunner -II Family 750 Gates 32 Macro Cells 200MHz 0.18um (CMOS) Technology 1.8V 56-Pin CSBGA