EPC2032ENGRT

Part NoEPC2032ENGRT

ManufacturerEPC

DescriptionTRANS GAN 100V 48A BUMPED DIE

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Specification

Vgs(th) (Max) @ Id2.5V @ 11mA

Vgs (Max)+6V, -4V

TechnologyGaNFET (Gallium Nitride)

Supplier Device PackageDie

SerieseGaN®

Rds On (Max) @ Id, Vgs4 mOhm @ 30A, 5V

Power Dissipation (Max)-

PackagingTape & Reel (TR)

Package / CaseDie

Other Names917-EPC2032ENGRTR

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1530pF @ 50V

Gate Charge (Qg) (Max) @ Vgs15nC @ 5V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)5V

Drain to Source Voltage (Vdss)100V

Detailed DescriptionN-Channel 100V 48A (Ta) Surface Mount Die

Current - Continuous Drain (Id) @ 25°C48A (Ta)

In Stock: 6148
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