Specification
Vgs(th) (Max) @ Id2.5V @ 7mA
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
Supplier Device PackageDie
SerieseGaN®
Rds On (Max) @ Id, Vgs25 mOhm @ 20A, 5V
Power Dissipation (Max)-
PackagingTape & Reel (TR)
Package / CaseDie
Other Names917-EPC2046ENGRTR
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time14 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds345pF @ 100V
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 11A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C11A (Ta)
In Stock:
4836
Pricing
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Associated Product
