Specification
MfrFairchild Semiconductor
SeriesUltraFETu00ae
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25u00b0C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
FET Feature-
Power Dissipation (Max)145W (Tc)
Operating Temperature-40u00b0C ~ 150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
In Stock:
5451
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.0 | |
| 10 | 13.72 | |
| 100 | 13.3 | |
| 1000 | 12.88 | |
| 10000 | 12.32 |
Associated Product
