FCP11N60N
Part NoFCP11N60N
Manufactureronsemi
DescriptionMOSFET N-CH 600V 10.8A TO220-3
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesSupreMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)299mOhm @ 5.4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs35.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1505 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature94W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17653
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9314 | |
| 10 | 1.8928 | |
| 100 | 1.8348 | |
| 1000 | 1.7769 | |
| 10000 | 1.6996 |
Associated Product
