FCU850N80Z
Part NoFCU850N80Z
Manufactureronsemi
DescriptionMOSFET N-CH 800V 6A IPAK
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
SeriesSuperFET® II
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)850mOhm @ 3A, 10V
RdsOn(Max)@Id4.5V @ 600µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1315 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11695
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9711 | |
| 10 | 0.9517 | |
| 100 | 0.9225 | |
| 1000 | 0.8934 | |
| 10000 | 0.8546 |
Associated Product
