FDA16N50-F109
Part NoFDA16N50-F109
Manufactureronsemi
DescriptionMOSFET N-CH 500V 16.5A TO3PN
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesUniFET™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C16.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 8.3A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1945 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature205W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3PN
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5741
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7115 | |
| 10 | 1.6773 | |
| 100 | 1.6259 | |
| 1000 | 1.5746 | |
| 10000 | 1.5061 |
Associated Product
