FDD2612
Part NoFDD2612
Manufactureronsemi
DescriptionMOSFET N-CH 200V 4.9A TO252
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C4.9A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)720mOhm @ 1.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)234 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-252 (DPAK)
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
Qualification
In Stock:
13163
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6972 | |
| 10 | 0.6833 | |
| 100 | 0.6623 | |
| 1000 | 0.6414 | |
| 10000 | 0.6135 |
Associated Product
