FDMS3669S
Part NoFDMS3669S
Manufactureronsemi
DescriptionMOSFET 2N-CH 30V 13A/18A POWER56
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Asymmetrical
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
RdsOn(Max)@Id10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Vgs2.7V @ 250µA, 2.5V @ 1mA
Vgs(th)(Max)@Id24nC @ 10V, 34nC @ 10V
GateCharge(Qg)(Max)@Vgs1605pF @ 15V, 2060pF @ 15V
InputCapacitance(Ciss)(Max)@Vds1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-PowerTDFN
Package/Case8-PQFN (5x6)
SupplierDevicePackage-
Grade-
Qualification
In Stock:
45430
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7395 | |
| 10 | 0.7247 | |
| 100 | 0.7025 | |
| 1000 | 0.6803 | |
| 10000 | 0.6508 |
Associated Product
