FDS6670S
Part NoFDS6670S
Manufactureronsemi
DescriptionSMALL SIGNAL N-CHANNEL MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C13.5A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9mOhm @ 13.5A, 10V
RdsOn(Max)@Id3V @ 1mA
Vgs34 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2674 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14749
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.912 | |
| 10 | 0.8938 | |
| 100 | 0.8664 | |
| 1000 | 0.839 | |
| 10000 | 0.8026 |
Associated Product
