FDS6892A
Part NoFDS6892A
Manufactureronsemi
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 7
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C7.5A
RdsOn(Max)@Id18mOhm @ 7.5A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id17nC @ 4.5V
GateCharge(Qg)(Max)@Vgs1333pF @ 10V
InputCapacitance(Ciss)(Max)@Vds900mW
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
22439
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5208 | |
| 10 | 0.5104 | |
| 100 | 0.4948 | |
| 1000 | 0.4791 | |
| 10000 | 0.4583 |
Associated Product
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