FDS6900S
Part NoFDS6900S
Manufactureronsemi
DescriptionMOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Datasheet
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Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C6.9A (Ta), 8.2A (Ta)
RdsOn(Max)@Id30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
Vgs3V @ 250µA, 3V @ 1mA
Vgs(th)(Max)@Id11nC @ 5V, 17nC @ 5V
GateCharge(Qg)(Max)@Vgs771pF @ 15V, 1238pF @ 15V
InputCapacitance(Ciss)(Max)@Vds900mW (Ta)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
15496
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.5871 | |
10 | 0.5754 | |
100 | 0.5577 | |
1000 | 0.5401 | |
10000 | 0.5166 |