FDU6N50TU
Part NoFDU6N50TU
Manufactureronsemi
DescriptionMOSFET N-CH 500V 6A IPAK
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesUniFET™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)900mOhm @ 3A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs16.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)940 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature89W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12810
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.45 | |
| 10 | 0.441 | |
| 100 | 0.4275 | |
| 1000 | 0.414 | |
| 10000 | 0.396 |
Associated Product
