FQB19N10LTM
Part NoFQB19N10LTM
Manufactureronsemi
DescriptionMOSFET N-CH 100V 19A D2PAK
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)100mOhm @ 9.5A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs18 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)870 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.75W (Ta), 75W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5249
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.63 | |
| 10 | 0.6174 | |
| 100 | 0.5985 | |
| 1000 | 0.5796 | |
| 10000 | 0.5544 |
Associated Product
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