FQB34N20TM
Part NoFQB34N20TM
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C31A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)75mOhm @ 15.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3100 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 180W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-263 (D2PAK)
GateCharge(Qg)(Max)@VgsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade
Qualification
In Stock:
11287
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6829 | |
| 10 | 2.6292 | |
| 100 | 2.5488 | |
| 1000 | 2.4683 | |
| 10000 | 2.361 |
Associated Product
