FQH90N10V2
Part NoFQH90N10V2
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C105A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)10mOhm @ 52.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs191 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)6150 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature330W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247AD
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
7323
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.8114 | |
| 10 | 3.7352 | |
| 100 | 3.6208 | |
| 1000 | 3.5065 | |
| 10000 | 3.354 |
Associated Product
