FQI3P20TU
Part NoFQI3P20TU
Manufactureronsemi
DescriptionMOSFET P-CH 200V 2.8A I2PAK
Datasheet
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Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.7Ohm @ 1.4A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs8 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6531
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.7938 | |
10 | 0.7779 | |
100 | 0.7541 | |
1000 | 0.7303 | |
10000 | 0.6985 |