FQI4N20TU
Part NoFQI4N20TU
Manufactureronsemi
DescriptionMOSFET N-CH 200V 3.6A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 1.8A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs6.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)220 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 45W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5828
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3978 | |
| 10 | 0.3898 | |
| 100 | 0.3779 | |
| 1000 | 0.366 | |
| 10000 | 0.3501 |
Associated Product
