FQI50N06LTU
Part NoFQI50N06LTU
Manufactureronsemi
DescriptionMOSFET N-CH 60V 52.4A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C52.4A (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)21mOhm @ 26.2A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs32 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1630 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.75W (Ta), 121W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4090
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.633 | |
| 10 | 1.6003 | |
| 100 | 1.5513 | |
| 1000 | 1.5024 | |
| 10000 | 1.437 |
Associated Product
