FQI9N50CTU
Part NoFQI9N50CTU
Manufactureronsemi
DescriptionMOSFET N-CH 500V 9A I2PAK
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)800mOhm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1030 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature135W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5737
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2555 | |
| 10 | 1.2304 | |
| 100 | 1.1927 | |
| 1000 | 1.1551 | |
| 10000 | 1.1048 |
Associated Product
