FQI9N50TU
Part NoFQI9N50TU
Manufactureronsemi
DescriptionMOSFET N-CH 500V 9A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)730mOhm @ 4.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs36 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1450 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 147W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4870
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.931 | |
| 10 | 0.9124 | |
| 100 | 0.8844 | |
| 1000 | 0.8565 | |
| 10000 | 0.8193 |
Associated Product
