FQP3N50C
Part NoFQP3N50C
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 1.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)365 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature62W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14452
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3567 | |
| 10 | 0.3496 | |
| 100 | 0.3389 | |
| 1000 | 0.3282 | |
| 10000 | 0.3139 |
Associated Product
