FQP3N80C
Part NoFQP3N80C
Manufactureronsemi
DescriptionMOSFET N-CH 800V 3A TO220-3
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)3A (Tc)
Current-ContinuousDrain(Id)@25°C10V
DriveVoltage(MaxRdsOn4.8Ohm @ 1.5A, 10V
MinRdsOn)5V @ 250µA
RdsOn(Max)@Id±30V
Vgs-
Vgs(th)(Max)@Id107W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeatureTO-220-3
PowerDissipation(Max)TO-220-3
OperatingTemperature800 V
MountingType16.5 nC @ 10 V
SupplierDevicePackage705 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20867
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.735 | |
| 10 | 0.7203 | |
| 100 | 0.6982 | |
| 1000 | 0.6762 | |
| 10000 | 0.6468 |
Associated Product
