FQP4N20L
Part NoFQP4N20L
Manufactureronsemi
DescriptionMOSFET N-CH 200V 3.8A TO220-3
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.8A (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)1.35Ohm @ 1.9A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs5.2 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)310 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature45W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
24191
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4895 | |
| 10 | 0.4797 | |
| 100 | 0.465 | |
| 1000 | 0.4503 | |
| 10000 | 0.4308 |
Associated Product
