FQP630
Part NoFQP630
Manufactureronsemi
DescriptionMOSFET N-CH 200V 9A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)550 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature78W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13134
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3774 | |
| 10 | 0.3699 | |
| 100 | 0.3585 | |
| 1000 | 0.3472 | |
| 10000 | 0.3321 |
Associated Product
