FQP6N60C
Part NoFQP6N60C
Manufactureronsemi
DescriptionMOSFET N-CH 600V 5.5A TO220-3
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2Ohm @ 2.75A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)810 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220-3
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
19040
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7565 | |
| 10 | 0.7414 | |
| 100 | 0.7187 | |
| 1000 | 0.696 | |
| 10000 | 0.6657 |
Associated Product
