FQPF7N80C
Part NoFQPF7N80C
Manufactureronsemi
DescriptionMOSFET N-CH 800V 6.6A TO220F
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C6.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.9Ohm @ 3.3A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1680 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature56W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F-3
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20611
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1011 | |
| 10 | 1.0791 | |
| 100 | 1.046 | |
| 1000 | 1.013 | |
| 10000 | 0.969 |
Associated Product
