HUF75945G3
Part NoHUF75945G3
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C38A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)71mOhm @ 38A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs280 nC @ 20 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4023 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature310W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247AD
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
6362
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8614 | |
| 10 | 2.8042 | |
| 100 | 2.7183 | |
| 1000 | 2.6325 | |
| 10000 | 2.518 |
Associated Product
