IRF830B
Part NoIRF830B
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2.25A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1050 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature73W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
21417
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6431 | |
| 10 | 0.6302 | |
| 100 | 0.6109 | |
| 1000 | 0.5917 | |
| 10000 | 0.5659 |
Associated Product
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