IRFR220BTM

Part NoIRFR220BTM

ManufacturerFairchild Semiconductor

DescriptionN-CHANNEL POWER MOSFET

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ECAD Module

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Specification

PackageBulk

Series-

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)200 V

Current-ContinuousDrain(Id)@25°C4.6A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)800mOhm @ 2.3A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs16 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)390 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature2.5W (Ta), 40W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-252 (DPAK)

SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 12766
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