IRFW530ATM
Part NoIRFW530ATM
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C14A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)110mOhm @ 7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs36 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)790 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 55W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseD2PAK
GateCharge(Qg)(Max)@VgsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade
Qualification
In Stock:
10908
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.33 | |
| 10 | 0.3234 | |
| 100 | 0.3135 | |
| 1000 | 0.3036 | |
| 10000 | 0.2904 |
Associated Product
