IRFW620BTM
Part NoIRFW620BTM
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)800mOhm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)390 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 47W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5392
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4902 | |
| 10 | 0.4804 | |
| 100 | 0.4657 | |
| 1000 | 0.451 | |
| 10000 | 0.4314 |
Associated Product
