IRLR210ATM
Part NoIRLR210ATM
Manufactureronsemi
DescriptionMOSFET N-CH 200V 2.7A DPAK
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2.7A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)1.5Ohm @ 1.35A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs9 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)240 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 21W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252 (DPAK)
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9356
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.532 | |
| 10 | 0.5214 | |
| 100 | 0.5054 | |
| 1000 | 0.4894 | |
| 10000 | 0.4682 |
Associated Product
