ISL9N306AS3ST
Part NoISL9N306AS3ST
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesUltraFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C75A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6mOhm @ 75A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs90 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3400 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AB
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15651
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4366 | |
| 10 | 0.4279 | |
| 100 | 0.4148 | |
| 1000 | 0.4017 | |
| 10000 | 0.3842 |
Associated Product
